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RQG1004UPAQL
NPN Silicon Germanium Transistor High Frequency Low Noise Amplifier
REJ03G1552-0100 Rev.1.00 Jul 20, 2007
Features
• Ideal for LNA applications. e.g. Tuner, Wireless LAN, Cordless phone and etc. • High gain and low noise. MSG = 25 dB typ. , NF = 0.65 dB typ. at VCE = 2 V, IC = 5 mA, f = 0.9 GHz MSG = 22 dB typ. , NF = 0.75 dB typ. at VCE = 2 V, IC = 5 mA, f = 1.8 GHz MSG = 21 dB typ. , NF = 0.85 dB typ. at VCE = 2 V, IC = 5 mA, f = 2.4 GHz MSG = 15 dB typ. , NF = 1.3 dB typ. at VCE = 2 V, IC = 10 mA, f = 5.8 GHz • High transition frequency fT = 41 GHz typ. • Small and low height package MFPAK-4 (1.4 x 0.8 x 0.55(max) mm)
Outline
RENESAS package code: PUSF0004ZA-A (Package name: MFPAK-4)
2 3 1 4
1.Emitter 2.Collector 3.Emitter 4.